jfet transistor nchannel maximum ratings rating symbol value unit drainsource voltage v ds 25 vdc gatesource voltage v gs 25 vdc gate current i g 10 madc thermal characteristics characteristic symbol max unit total device dissipation fr5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w junction and storage temperature t j , t stg 55 to +150 c device marking mmbfu310lt1 = 6c electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics gatesource breakdown voltage (i g = 1.0 m adc, v ds = 0) v (br)gss 25 vdc gate 1 leakage current (v gs = 15 vdc, v ds = 0) i g1ss 150 pa gate 2 leakage current (v gs = 15 vdc, v ds = 0, t a = 125 c) i g2ss 150 nadc gate source cutoff voltage (v ds = 10 vdc, i d = 1.0 nadc) v gs(off) 2.5 6.0 vdc on characteristics zerogatevoltage drain current (v ds = 10 vdc, v gs = 0) i dss 24 60 madc gatesource forward voltage (i g = 10 madc, v ds = 0) v gs(f) 1.0 vdc smallsignal characteristics forward transfer admittance (v ds = 10 vdc, i d = 10 madc, f = 1.0 khz) |y fs | 10 18 mmhos output admittance (v ds = 10 vdc, i d = 10 madc, f = 1.0 khz) |y os | 250 m mhos input capacitance (v gs = 10 vdc, v ds = 0 vdc, f = 1.0 mhz) c iss 5.0 pf reverse transfer capacitance (v gs = 10 vdc, v ds = 0 vdc, f = 1.0 mhz) c rss 2.5 pf 1. fr5 = 1.0 0.75 0.062 in. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 november, 2001 rev. 2 1 publication order number: mmbfu310lt1/d mmbfu310lt1 on semiconductor preferred device 1 2 3 case 31808, style 10 sot23 (to236ab) 2 source 3 gate 1 drain
mmbfu310lt1 http://onsemi.com 2 70 60 50 40 30 20 -5.0 -4.0 -3.0 -2.0 -1.0 0 i d - v gs , gate-source voltage (volts) 10 0 70 60 50 40 30 20 10 , drain current (ma) i d i dss - v gs , gate-source cutoff voltage (volts) v ds = 10 v i dss +25 c t a = -55 c +25 c +25 c -55 c +150 c +150 c , saturation drain current (ma) i dss figure 1. drain current and transfer characteristics versus gatesource voltage v gs , gate-source voltage (volts) 5.0 4.0 3.0 2.0 1.0 0 35 30 25 20 15 10 5.0 0 , forward transconductance (mmhos) y fs figure 2. forward transconductance versus gatesource voltage v ds = 10 v f = 1.0 mhz t a = -55 c +25 c +150 c +25 c -55 c +150 c i d , drain current (ma) 100 k 10 k 1.0 k 100 1.0 k 100 10 1.0 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 , forward transconductance ( mhos) y fs m , output admittance ( mhos) y os m v gs(off) = -2.3 v = v gs(off) = -5.7 v = figure 3. commonsource output admittance and forward transconductance versus drain current y fs y fs y os v gs , gate source voltage (volts) 5.0 4.0 3.0 2.0 1.0 0 6.0 7.0 8.0 9.0 10 capacitance (pf) 10 7.0 4.0 1.0 0 120 96 72 48 24 0 , on resistance (ohms) r ds r ds c gs c gd figure 4. on resistance and junction capacitance versus gatesource voltage
mmbfu310lt1 http://onsemi.com 3 |y 11 |, |y 21 |, |y 22 | (mmhos) y 12 (mmhos) 30 24 18 12 6.0 0 1000 100 200 300 500 700 f, frequency (mhz) 3.0 2.4 1.8 1.2 0.6 |s 21 |, |s 11 | 0.45 0.39 0.33 0.27 0.21 0.15 0.85 0.79 0.73 0.67 0.61 0.55 |s 12 |, |s 22 | 0.060 0.048 0.036 0.024 0.012 1.00 0.98 0.96 0.94 0.92 0.90 1000 100 200 300 500 700 f, frequency (mhz) figure 5. commongate y parameter magnitude versus frequency figure 6. commongate s parameter magnitude versus frequency v ds = 10 v i d = 10 ma t a = 25 c y 11 y 21 y 22 y 12 s 22 s 21 s 11 s 12 v ds = 10 v i d = 10 ma t a = 25 c f, frequency (mhz) q 21 , q 11 50 40 30 20 10 0 180 170 160 150 140 130 q 12 , q 22 -2 0 -40 -80 -120 -160 -200 -20 -60 -100 -140 -180 87 86 85 84 83 82 1000 100 200 300 500 700 figure 7. commongate y parameter phaseangle versus frequency f, frequency (mhz) q 11 , q 12 120 100 80 60 40 20 -20 -40 -60 -80 -100 -120 q 21 , q 22 0 -40 -80 -20 -60 -100 1000 100 200 300 500 700 figure 8. s parameter phaseangle versus frequency q 22 q 21 q 12 q 11 v ds = 10 v i d = 10 ma t a = 25 c q 11 q 21 q 22 q 21 q 11 q 12 v ds = 10 v i d = 10 ma t a = 25 c
mmbfu310lt1 http://onsemi.com 4 the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation p d = t j(max) t a r q ja p d = 150 c 25 c 556 c/w = 225 milliwatts the power dissipation of the sot23 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipa- tion. power dissipation for a surface mount device is deter- mined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milli- watts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. there- fore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause exces- sive thermal shock and stress which can result in damage to the device.
mmbfu310lt1 http://onsemi.com 5 package dimensions case 31808 issue af sot23 (to236ab) d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. style 10: pin 1. drain 2. source 3. gate
mmbfu310lt1 http://onsemi.com 6 notes
mmbfu310lt1 http://onsemi.com 7 notes
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